SENTECH SI 500 D ICPECVD System

The SENTECH SI 500 D ICPECVD System represents the leading edge for inductively coupled plasma (ICP) processing in both research and industry for plasma-enhanced chemical vapor deposition of dielectric films, a-Si, SiC, and other materials. The system comprises the ICP plasma source PTSA, a dynamic temperature-controlled substrate electrode, and a fully controlled vacuum system. A large variety of substrates from 100 mm wafers up to 200 mm diameter, as well as substrates on carriers can be handled by the flexible load lock built into the SENTECH SI 500 D. The single-wafer vacuum load lock and mechanical clamping guarantees stable conditions and allows for straightforward switching of processes.